Method for creating mask data, program, information processing apparatus, and method for manufacturing mask

ABSTRACT

Data regarding a first corrected patterns on a single cell corrected such that an evaluation value of a pattern formed on a substrate after an image of a pattern of the single cell is projected onto a resist on the substrate and the resist is developed is obtained for each of a plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection system is obtained for each of the cells, a second evaluation value obtained by, when the cells are arranged adjacent to one another, evaluating the projected images of the first corrected patterns on the cells is calculated, and creating a second corrected pattern by correcting the first corrected patterns on the cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present disclosure relates to a method for creating mask data, aprogram, an information processing apparatus, and a method formanufacturing a mask.

2. Description of the Related Art

In order to fabricate a semiconductor device, an exposure apparatusilluminates a mask and projects images of patterns on the mask onto awafer to transfer the patterns to the wafer. In order to accuratelytransfer the patterns to the wafer, it is known to use mask patterns onwhich process proximity effect correction (PPC) has been performed. ThePPC is a technique that includes optical proximity effect correction andthat corrects patterns on a mask while taking into consideration theeffects of development of resists and etching of a wafer in processingsteps.

In Japanese Patent Laid-Open No. 2005-84101, it is described that eachof elements (cells) included in a circuit pattern having a certainelectrical function is subjected to the PPC in advance and saved as alibrary. Furthermore, it is described that when patterns on a mask areto be created by arranging a plurality of cells selected from librariesadjacent to one another, a process proximity effect generated inboundary portions of the cells is corrected again. In doing so, the timetaken to complete calculation may be reduced compared to when maskpatterns are created by arranging a plurality of cells that have notbeen subjected to correction and then the PPC is performed on all themask patterns.

In Michael C. Smayling et al. “Low k1 Logic Design using Gridded DesignRules”, Proc. of SPIE Vol. 6925 (2008), a method for fabricating acircuit pattern called “1D layout technique” is described. In thistechnique, first, a line-and-space (L/S) pattern of a single pitch isformed on a wafer, and then a plurality of positions are exposed tolight though hole patterns. As a result, part of the L/S pattern is cut,and thus a circuit pattern is fabricated. The exposure in this techniqueis technically easier than in the case of using a two-dimensionalpattern that extends both in a vertical direction and in a horizontaldirection. In this technique, as in the invention described in JapanesePatent Laid-Open No. 2005-84101, a method for creating mask patterns byarranging a plurality of cells subjected to the PPC and performing thePPC again on boundary portions of the cells is used. The area of eachcell included in patterns used in the 1D layout technique is small. Whenmask patterns are created by arranging a large number of cells whoseareas are small adjacent to one another, the areas of boundary portionsof the cells occupy most of the areas of the mask patterns. Therefore,when the PPC is again performed on the boundary portions of the smallcells subjected to the PPC as in the invention described in JapanesePatent Laid-Open No. 2005-84101, the time taken to complete thecalculation of the PPC in the boundary portions becomes long, therebymaking the effect of reducing the calculation time less effective.

In calculation adopting only the optical proximity effect correction,the calculation time is shorter than in the case of the PPC, which alsoincludes calculation for the development and the etching, but since theeffects of the development and the etching are not taken intoconsideration, mask patterns are not sufficiently corrected.

SUMMARY OF THE INVENTION

The present invention provides a method for creating mask data that mayfurther reduce calculation time while performing pattern correction thattakes into consideration the effects of development and subsequentprocesses.

Further features of the present invention will become apparent from thefollowing description of exemplary embodiments with reference to theattached drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart illustrating a method for creating mask dataaccording to a first embodiment.

FIGS. 2A and 2B are diagrams illustrating patterns on each cell.

FIG. 3 is a diagram illustrating a case in which Cell A and Cell B arearranged adjacent to each other.

FIG. 4 is a diagram illustrating comparisons between dimensions CDO1 andCDO2 of projected images and dimensions CDO3 of projected images ofsecond corrected patterns in a Y direction.

FIG. 5 is a diagram illustrating comparisons between dimensions CDR1,CDR2, and CDR3 of resist images.

FIGS. 6A and 6B are diagrams illustrating determination of a distancebetween cells.

FIG. 7 is a flowchart illustrating a method for creating mask dataaccording to a second embodiment.

FIG. 8 is a diagram illustrating comparisons between dimensions CDO4 ofprojected images of holes and the dimensions CDO1 and CDO2.

DESCRIPTION OF THE EMBODIMENTS First Embodiment

Embodiments of the present invention will be described in detailhereinafter with reference to the accompanying drawings. In thisembodiment, data regarding a mask to be used by an exposure apparatusthat exposes a substrate to light by illuminating a mask (reticle) usinglight from a light source and an illumination optical system andprojecting images of patterns on the mask onto a wafer (substrate) usinga projection optical system is created. An embodiment of the presentinvention may be applied in order to create data regarding patterns on amask to be used to manufacture various devices including semiconductorchips such as an integrated circuit (IC) and a large-scale integration(LSI) chip, display devices such as a liquid crystal panel, detectiondevices such as a magnetic head, and image pickup devices such as acharge-coupled device (CCD) or in micromechatronics.

FIG. 1 is a flowchart illustrating a method for creating mask dataaccording to this embodiment. The method is used by an informationprocessing apparatus such as a computer. For example, the creationmethod is implemented when a program for realizing steps illustrated inFIG. 1 has been supplied to the information processing apparatus or aninformation processing system through a network or a recording mediumand the information processing apparatus or the information processingsystem has read and executed the program stored in a storage medium suchas a memory.

In S101, a computer obtains data regarding corrected patterns on asingle cell subjected to PPC. In the PPC, correction is performed whiletaking into consideration development of a substrate and processes afterthe development such as etching and ion implantation.

FIG. 2A is a diagram illustrating patterns on Cell A. FIG. 2B is adiagram illustrating patterns on Cell B. Cell A includes rectangularhole patterns A1-1 and A4-1. Cell B includes rectangular hole patternsB1-1 to B4-1. Each hole (pattern element) is used to cut an L/S patternat a position at which each hole and the L/S pattern overlap. A circlein each rectangular hole indicates the contour of a projected image(optical image) of each hole pattern, and a distance between dots on thecontour indicates a critical dimension (CD) of the projected image in aY direction (vertical direction). In this embodiment, a target value ofthe dimension of each hole in the Y direction is 70 nm.

First, data regarding images projected onto a wafer when only Cell Awhose patterns have not been corrected is disposed in an object plane ofthe projection optical system of the exposure apparatus is obtained.Next, data regarding resist images formed on the wafer when a resistexposed to light using the projected images has been developed isobtained, and the relationship between the resist images and thepatterns on Cell A is obtained. With respect to Cell B, too, dataregarding images projected onto a wafer when only Cell B whose patternshave not been corrected is disposed in the object plane of theprojection optical system of the exposure apparatus and data regardingresist images are obtained. The data regarding projected images and thedata regarding resist images to be obtained may be results ofmeasurement of the patterns actually formed on the wafer using ascanning electron microscope (SEM) or the like, or may be results ofcalculation obtained through simulation. An evaluation index such as adimension (line width), the normalized image log-slope (NILS), or lightintensity may be used to evaluate the images.

In this embodiment, resist images of patterns formed on a wafer whenimages of patterns on a single cell have been projected onto a resist onthe wafer and the resist has been developed are calculated using aresist simulator that calculates resist images. Next, dimensions CDR1 ofthe resist images in the Y direction are calculated as evaluationvalues. Finally, the dimensions of holes are corrected such that theevaluation values become close to the target value of 70 mm. In thesimulation of projected images, images at a best focus position arecalculated under a constant amount of exposure while determining thewavelength of the light source to be 193 nm, the numerical aperture (NA)of the projection optical system to be 1.35, and the effective lightsource distribution (light intensity distribution in a pupil plane ofthe illumination optical system) to be dipole (double poles).Calculation is independently performed for Cell A and Cell B.

Table 1 indicates dimensions CDM1 of the holes (first correctedpatterns) in the Y direction after the correction and the dimensionsCDR1 of the resist images in the Y direction generated by the firstcorrected patterns.

TABLE 1 Name of Dimension CDM1 of first Dimension CDR1 of hole correctedpattern resist image A1-1 83.7 nm 70.0 nm A4-1 83.7 nm 70.0 nm B1-1 78.6nm 69.9 nm B1-2 77.7 nm 69.9 nm B1-3 80.2 nm 70.1 nm B2-1 78.5 nm 69.7nm B2-2 79.7 nm 70.1 nm B3-1 79.7 nm 70.1 nm B3-2 75.9 nm 69.8 nm B4-180.8 nm 70.2 nm

As can been seen from Table 1, the dimensions of the resist imagesgenerated by the holes have become close to the target value, whichverifies the effect of the PPC. Each cell including the first correctedpatterns corrected in such a manner is saved to a storage unit such asthe memory of the computer as a library. A user selects a cell to beused for creating patterns on a mask from libraries. The computer thencalls data regarding the selected one of the plurality of cells saved asthe libraries to obtain data regarding the first corrected patterns onthe cell.

In S102, an evaluation value (first evaluation value) obtained byevaluating a projected image of the first corrected pattern on a singlecell generated by the projection optical system is obtained for eachcell. First, the projected image of the first corrected pattern on thesingle cell generated by the projection optical system is calculated.Here, calculation is independently performed for Cell A and Cell B sothat Cell A and Cell B are not affected by the optical proximity effectupon each other. The calculated projected images are then evaluated. Asthe evaluation values, the dimensions of images in the Y direction usedin S101 are used. Table 2 indicates dimensions CDO1 (first evaluationvalues) of the projected images of the first corrected patterns on thecells in the Y direction generated by the projection optical system.

TABLE 2 Name of Dimension CDO1 of projected image of first holecorrected pattern on single cell A1-1 70.0 nm A4-1 70.0 nm B1-1 65.2 nmB1-2 64.6 nm B1-3 69.6 nm B2-1 68.1 nm B2-2 67.8 nm B3-1 64.5 nm B3-264.4 nm B4-1 69.5 nm

As indicated in Table 2, some dimensions CDO1 are deviated from thetarget value of 70 nm by as large as about 5 nm. This is because thepatterns formed on the wafer are different from the projected images dueto the effects of development and etching.

The computer may obtain the dimensions CDO1 of the projected images ofthe first corrected patterns on the single cell through calculationperformed by an arithmetic unit, or may obtain the dimensions CDO1 ofthe projected images of the first corrected patterns on the single cellby reading data that has been calculated and stored by another computerin advance.

In S103, in order to create patterns on a mask, arrangement of each cellon the mask is determined. FIG. 3 is a diagram illustrating a case inwhich Cell A and Cell B are arranged adjacent to each other. In thisembodiment, Cell A and Cell B are arranged adjacent to each other with acertain distance provided therebetween. The certain distance will bedescribed in detail later.

In S104, the projected images of the first corrected patterns on aplurality of cells when the plurality of cells are arranged adjacent toeach other on the mask are calculated, and an evaluation value (secondevaluation value) of the projected images is calculated. First, theprojected images of the first corrected patterns on Cell A and Cell Bwhen Cell A and Cell B including the first corrected patterns arearranged adjacent to each other are calculated. Next, a dimension CDO2(second evaluation value) of the projected images in the Y direction iscalculated. Table 3 indicates comparisons between the dimensions CDO1 ofthe projected images of the first corrected patterns on the single cellgenerated by the projection optical system and the dimensions CDO2 ofthe projected images of the first corrected patterns in the Y directionat a time when the cells are arranged adjacent to each other.

TABLE 3 Dimension CDO1 of Dimension CDO2 of projected Name projectedimage of image of first corrected of first corrected pattern pattern ofcells when cells hole on single cell are adjacent to each other A1-170.0 nm 70.0 nm A4-1 70.0 nm 76.5 nm B1-1 65.2 nm 65.2 nm B1-2 64.6 nm64.9 nm B1-3 69.6 nm 74.5 nm B2-1 68.1 nm 68.6 nm B2-2 67.8 nm 71.8 nmB3-1 64.5 nm 65.1 nm B3-2 64.4 nm 64.8 nm B4-1 69.5 nm 70.5 nm

As indicated in Table 3, the dimensions CDO1 and CDO2 do not necessarilymatch. This is because the cells are affected by the optical proximityeffect upon each other when the cells are arranged adjacent to eachother. Changes in the dimensions of the holes A4-1 and B1-3 areparticularly large, which indicates that the optical proximity effect onthese holes caused by arranging the cells adjacent to each other islarge.

In S105, second corrected patterns are created by correcting the firstcorrected patterns on Cell A and Cell B arranged adjacent to each othersuch that the second evaluation value becomes close to the firstevaluation value. Next, data regarding a mask including the createdsecond corrected patterns is created (S106). The correction of thepatterns is performed by adjusting the biases of the dimensions (lengthsof sides) of the rectangular holes. However, the type of correction isnot limited to this, and complex correction of dimensions may beperformed. The data regarding a mask may include data regarding thetransmittance and the phase of the mask.

Table 4 indicates comparisons between the dimensions CDM1 of the firstcorrected patterns in the Y direction and the dimensions CDM2 of thesecond corrected patterns in the Y direction.

TABLE 4 Name of Dimension CDM1 of first Dimension CDM2 of second holecorrected pattern corrected pattern A1-1 83.7 nm 84.2 nm A4-1 83.7 nm81.0 nm B1-1 78.6 nm 79.0 nm B1-2 77.7 nm 78.1 nm B1-3 80.2 nm 78.6 nmB2-1 78.5 nm 78.8 nm B2-2 79.7 nm 78.5 nm B3-1 79.7 nm 79.9 nm B3-2 75.9nm 76.2 nm B4-1 80.8 nm 81.1 nm

FIG. 4 is a diagram illustrating comparisons between the dimensions CDO1and CDO2 of the projected images and dimensions CDO3 of the projectedimages of the second corrected patterns in the Y direction. Whereas theroot mean square (RMS) of the differences between the dimensions CDO1and CDO2 is 2.90 nm, the RMS of the differences between the dimensionsCDO1 and CDO3 is 0.06 nm, which indicates that the dimensions CDO1 andCDO3 are substantially the same.

Thus, by correcting the first corrected patterns on the plurality ofcells adjacent to each other such that the second evaluation valuesbecome close to the first evaluation values, the projected images of thesecond corrected patterns become substantially the same as the projectedimages of the first corrected patterns on a single cell. Therefore,resist images of the second corrected patterns are expected to have thesame dimensions CDR1 as the resist images of the first correctedpatterns on a single cell. Accordingly, since the second correctedpatterns obtained by calculating only the projected images take intoconsideration correction corresponding to the effect of the developmentprocess, patterns close to the target value may be formed on the waferusing the second corrected patterns. In addition, since only thecalculation of the projected images is performed without calculatingresist images when the second corrected patterns are created bycorrecting the first corrected patterns, the time taken to complete thecalculation may be reduced.

Next, the validity of the creation method according to this embodimentwill be described. Resist images are calculated using the secondcorrected patterns determined in this embodiment, and dimensions CDR3 ofthe resist images in the Y direction are obtained. In addition, for thepurpose of comparison, the resist images of the first corrected patternswhen the cells are arranged adjacent to each other are calculated, anddimensions CDR2 of the resist images are obtained. FIG. 5 is a diagramillustrating comparisons between the dimensions CDR1, CDR2, and CDR3 ofthe resist images. As can be seen from FIG. 5, whereas the RMS of thedifferences between the dimensions CDR1 and CDR2 is 3.38 nm, the RMS ofthe differences between the dimensions CDR1 and CDR3 is 0.50 nm, whichindicates that the dimensions CDR1 and CDR3 are substantially the same.The time taken to complete the calculation is 41 seconds in thecalculation of the resist images performed in S101 whereas it is 11seconds in the calculation of only the projected images. That is, bycalculating only the projected images, the time taken to complete thecalculation may be reduced.

In S103, Cell A and Cell B are arranged adjacent to each other with adistance of 86.0 nm, which exceeds 0.36×λ/NA=51.5 nm, providedtherebetween. The reason why Cell A and Cell B are arranged adjacent toeach other with a distance L that exceeds 0.36×λ/NA providedtherebetween will be described. FIGS. 6A and 6B are diagramsillustrating the projected images of the second corrected patterns at atime when the second corrected patterns have been created using thecreation method according to this embodiment while arranging Cell A andCell B adjacent to each other. FIG. 6A illustrates a case in whichL≧51.5 nm (k1≧0.36), and FIG. 6B illustrates a case in which L<51.5 nm(k1<0.36). Cell A and Cell B have been moved from the arrangementillustrated in FIG. 3 in the Y direction by certain distances for thepurpose of examination.

Although correction of the Y dimensions may be achieved in both FIG. 6Aand FIG. 6B, a “bridge” is undesirably generated between the holesillustrated in FIG. 6B in a portion surrounded by a broken line, and theprojected images are connected to each other. Therefore, it may beconsidered that a limit to the distance for enabling adjacentarrangement exists somewhere between the distance L set in FIG. 6A andthe distance L set in FIG. 6B. Since k1 at this time is 0.36, the cellsare arranged adjacent to each other with the distance L that exceeds0.36×λ/NA provided therebetween in S103. That is, the plurality of cellsinclude patterns in which some projected images of the first correctedpatterns are connected to each other when the plurality of cells arearranged adjacent to each other with a distance shorter than a certaindistance provided therebetween. Therefore, the certain distance or adistance that exceeds the certain distance needs to be provided so thatsome projected images of the first corrected patterns are not connectedto each other.

Although the best focus position and a constant amount of exposure areused as the conditions in the above description, a plurality of focuspositions and a plurality of amounts of exposure may be used as theconditions, instead. In addition, auxiliary patterns that generate noimages may be added to hole patterns as patterns on a cell or a mask.

Although a case in which two cells are arranged horizontally adjacent toeach other has been described as an example, two cells may be arrangedvertically or diagonally adjacent to each other or three or more cellsmay be arranged adjacent to one another, instead. In addition, aboundary portion of cells may be determined, and pattern correctionusing the method according to this embodiment may be performed only onthe boundary portion, instead.

Although cells having patterns in which a plurality of holes areseparately provided are used in this embodiment, cells having holes thatare horizontally connected to one another may be applied, instead. Inaddition, although hole patterns are used as a type of pattern includedin cells in this embodiment, line patterns or the like may be used, orcells including various patterns may be used, instead.

In addition, the same effects may be produced using images obtained byperforming convolution integration on projected images using a Gaussianfunction regarding a distance or the like as the projected images ofpatterns generated by the projection optical system. This is because thecalculation of convolution integration using a Gaussian function or thelike is simple and does not take much time.

Second Embodiment

In a second embodiment, a method for creating mask patterns using therate of change in the dimensions of projected images relative to changesin the dimensions of the mask patterns. FIG. 7 is a flowchartillustrating a method for determining mask patterns according to thesecond embodiment.

In S205, the amounts of change in the dimensions of the projected imagesrelative to changes in the dimensions of the first corrected patterns ata time when Cell A and Cell B are arranged adjacent to each other arecalculated. First, the amount of exposure when dimensions are calculatedon the wafer is determined such that the vertical dimension of thepattern A1-1 illustrated in FIG. 3 becomes 70 nm. Next, amounts ofchange (rates of change) ΔCDO in the dimensions of the projected imageswhen the dimensions of the hole patterns A4-1 to B4-1 are increased by 1nm (unit amount) are calculated under the determined amount of exposure.

In S206, amounts of correction ΔCDM of the dimensions of the holes arecalculated. Here, the differences between the dimensions CDO2 and CDO1are divided by the amounts of change ΔCDO while assuming that theamounts of change in the dimensions of the holes and the amounts ofchange ΔCDO are proportional to each other. By determining resultantvalues to be the amounts of correction ΔCDM of the dimensions of theholes, the dimensions CDO2 match the dimensions CDO1. In S207, the firstcorrected patterns are corrected by the amounts of correction ΔCDM tocalculate dimensions CDM3 of the corrected hole patterns (secondcorrected patterns). In S208, the second corrected patterns aredetermined as the mask patterns, and mask data including the secondcorrected patterns is created.

The values calculated in steps S205 and S206 in this embodiment are asindicated in Table 5.

TABLE 5 Dimension Amount of CDM1 of change ΔCDO in Amount of DimensionName first dimension of correction CDM3 of of corrected projected ΔCDMof corrected hole pattern image dimension hole pattern A1-1 83.7 nm — —83.7 nm A4-1 83.7 nm 1.84 nm −3.53 nm 80.2 nm B1-1 78.6 nm 2.14 nm −0.02nm 78.6 nm B1-2 77.7 nm 2.16 nm −0.11 nm 77.6 nm B1-3 80.2 nm 1.90 nm−2.61 nm 77.6 nm B2-1 78.5 nm 2.08 nm −0.23 nm 78.3 nm B2-2 79.7 nm 2.01nm −2.01 nm 77.7 nm B3-1 79.7 nm 2.18 nm −0.27 nm 79.4 nm B3-2 75.9 nm2.23 nm −0.15 nm 75.8 nm B4-1 80.8 nm 1.97 nm −0.18 nm 80.6 nm

FIG. 8 illustrates results of comparisons between dimensions CDO4 of theprojected images of the holes calculated using the mask pattern createdin this embodiment and the dimensions CDO1 and CDO2. As can be seen fromFIG. 8, whereas the RMS of the differences between the dimensions (CDs)CDO1 and CDO2 is 2.90 nm, the RMS of the differences between thedimensions (CDs) CDO1 and CDO4 is 0.60 nm.

A mask is manufactured by a mask manufacturing apparatus such as anelectron beam drawing apparatus. More specifically, a mask on whichpatterns are drawn is manufactured by inputting the created mask data tothe mask manufacturing apparatus and drawing the patterns on a maskblank on the basis of the input data.

A method for manufacturing a semiconductor device using theabove-described exposure apparatus will be described. First, the maskmanufactured in the above-described manner is mounted on the exposureapparatus, and a substrate to which a photosensitizing agent (resist)has been applied is exposed to light. The exposure apparatus illuminatesthe mask (reticle) using light from the light source and theillumination optical system, and the images of the patterns on the maskare projected onto a wafer (substrate) using the projection opticalsystem, thus exposing the substrate to light. The substrate exposed tolight is then developed. Furthermore, the method for manufacturing asemiconductor device may include other known processes (oxidation,deposition, vapor deposition, doping, smoothing, etching, resistpeeling, dicing, bonding, packaging, and the like).

Other Embodiments

Embodiments of the present invention can also be realized by a computerof a system or apparatus that reads out and executes computer executableinstructions recorded on a storage medium (e.g., non-transitorycomputer-readable storage medium) to perform the functions of one ormore of the above-described embodiment(s) of the present invention, andby a method performed by the computer of the system or apparatus by, forexample, reading out and executing the computer executable instructionsfrom the storage medium to perform the functions of one or more of theabove-described embodiment(s). The computer may comprise one or more ofa central processing unit (CPU), micro processing unit (MPU), or othercircuitry, and may include a network of separate computers or separatecomputer processors. The computer executable instructions may beprovided to the computer, for example, from a network or the storagemedium. The storage medium may include, for example, one or more of ahard disk, a random-access memory (RAM), a read only memory (ROM), astorage of distributed computing systems, an optical disk (such as acompact disc (CD), digital versatile disc (DVD), or Blu-ray Disc (BD)™),a flash memory device, a memory card, and the like.

While the present invention has been described with reference toexemplary embodiments, it is to be understood that the invention is notlimited to the disclosed exemplary embodiments. The scope of thefollowing claims is to be accorded the broadest interpretation so as toencompass all such modifications and equivalent structures andfunctions.

This application claims the benefit of Japanese Patent Application No.2012-203005, filed Sep. 14, 2012, which is hereby incorporated byreference herein in its entirety.

What is claimed is:
 1. A method for creating data regarding a mask to be used by an exposure apparatus that exposes a substrate by illuminating the mask and projecting an image of pattern on the mask onto the substrate using a projection optical system, the method being executed by a computer, the method comprising the steps of: obtaining, for each of a plurality of cells, data regarding a first corrected pattern on a single cell corrected such that an evaluation value of a pattern formed on the substrate after an image of a pattern on the single cell is projected onto a resist on the substrate and the resist is developed become close to a target value; obtaining, for each of the plurality of cells, a first evaluation value obtained by evaluating a projected image of the first corrected pattern on the single cell generated by the projection optical system; calculating, when the plurality of cells are arranged adjacent to one another, a second evaluation value obtained by evaluating the projected images of the first corrected patterns on the plurality of cells generated by the projection optical system; creating second corrected patterns by correcting the first corrected patterns on the plurality of cells arranged adjacent to one another such that the second evaluation value becomes close to the first evaluation value; and creating the data regarding the mask including the second corrected patterns on the plurality of cells arranged adjacent to one another.
 2. The method according to claim 1, wherein each of the plurality of cells is a cell whose patterns are different from those formed on the other cells.
 3. The method according to claim 1, wherein the plurality of cells include patterns in which some projected images of the first corrected patterns are connected to each other when the plurality of cells are arranged adjacent to one another with a distance shorter than a certain distance provided between the plurality of cells, and wherein the plurality of cells are arranged adjacent to one another such that some projected images of the first corrected patterns are not connected to each other.
 4. The method according to claim 3, wherein the certain distance is 0.36×λ/NA when a wavelength of light illuminating the mask is denoted by λ and a numerical aperture of the projection optical system is denoted by NA.
 5. The method according to claim 3, wherein the plurality of cells are arranged adjacent to one another with the certain distance provided between the plurality of cells.
 6. The method according to claim 1, wherein the first evaluation value and the second evaluation value are dimensions of a pattern, and wherein an amount of change in a dimension of the projected image of the first corrected pattern when dimensions of the first corrected patterns have been changed by a unit amount is calculated, and the first corrected pattern is corrected using the amount of change and differences between the first evaluation value and the second evaluation value.
 7. The method according to claim 6, wherein the first corrected pattern includes a plurality of pattern elements, and wherein the amount of change is calculated for each of the pattern elements.
 8. The method according to claim 1, wherein an image obtained by performing convolution integration on the projected images using a Gaussian function regarding a distance is used as the projected image generated by the projection optical system.
 9. A program for causing a computer to execute the method according to claim
 1. 10. An information processing apparatus or an information processing system that executes the method according to claim
 1. 11. A method for manufacturing a mask, the method comprising the steps of: creating data regarding the mask using the method according to claim 1; and manufacturing the mask using the created data regarding the mask.
 12. An exposure method comprising the steps of: manufacturing a mask using the method for manufacturing a mask according to claim 11; and exposing a substrate through an image of pattern on the mask using the manufactured mask.
 13. A method for manufacturing a device, the method comprising the steps of: exposing a substrate using the exposure method according to claim 12; and developing the exposed substrate. 